Junction of Area Selective deposition Manufacturing and Directional etch to Improve critical dimension reduction and uniformity in Nanoscale features (JASMIN).

Objective

Nanopatterning is central to advancing semiconductor technologies, enabling sub-7 nm nodes to drive higher device speed, density and performance. Continued downscaling faces critical challenges in lithography and etching, particularly for back-end-of-line interconnects, where achieving sub-20 nm pitch requires innovative solutions to overcome line-edge roughness, misalignment, and defectivity. The JASMIN project proposes a novel integration of Area-Selective Deposition (ASD) and Directional Etching (DE) to improve critical dimension reduction and uniformity at technologically relevant dimensions. ASD leverages surface chemistry to selectively deposit thin films, offering defect mitigation and precise material placement, while DE employs collimated ion beams for controlled, anisotropic material removal and pattern shaping. Their combination provides a pathway to reduce tip-to-tip distances, enhance pattern fidelity and minimize defects. The project is structured into three objectives: 1) fabrication of test structures using DE across different material stacks; 2) development of ASD processes with advanced surface passivation and defect removal strategies; 3) demonstration of pattern transfer and hard mask performance on 300 mm wafers, ensuring integration relevance for industrial applications. Advanced surface characterization and metrology will underpin all stages to control defectivity and optimize processing. Hosted at IMEC, with access to state-of-the-art infrastructure and industrial collaborations, the project will provide the researcher with multidisciplinary training spanning chemistry, materials science, physics, and nanoelectronics. Outcomes will include proof-of-concept demonstration of ASD-DE synergy for sub-10 nm patterning, transferable methodologies for BEOL interconnect fabrication, and enhanced career development of the researcher. JASMIN thus represents a significant step toward overcoming current scaling bottlenecks in semiconductor manufacturing.